Componentes electrónicos : W4NXD8C-S000

Fabricante : Cree

Embalaje :

Pins :

Descripción : Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

Temperatura : Min °C | Máx °C

Datasheet : W4NXD8C-S000 PDF

• W4NXD8C-0000
• W4NXD8C-L000
• W4NXD8C-S000