Componentes electrónicos : HVV1214-100

Fabricante : HVVi Semiconductors, Inc.

Embalaje :

Pins :

Descripción : L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty For Ground Based Radar Applications

Temperatura : Min °C | Máx °C

Datasheet :

• HVV1214-025
• HVV1214-025S
• HVV1214-075
• HVV1214-100
• HVV1214-100-EK