Componentes electrónicos : GT30J121

Fabricante : Toshiba Semiconductor

Embalaje :

Pins :

Descripción : TOSHIBA Insulated Gate Bipolar Transistor Silicon Channel IGBT

Temperatura : Min °C | Máx °C

Datasheet : GT30J121 PDF

• GT30J101
• GT30J10106
• GT30J101_06
• GT30J121
• GT30J12106
• GT30J121_06
• GT30J122
• GT30J301
• GT30J311
• GT30J322
• GT30J324
• GT30J32406
• GT30J324_06