Componentes electrónicos : BUL642D2

Fabricante : Semiconductor

Embalaje :

Pins :

Descripción : High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network

Temperatura : Min °C | Máx °C

Datasheet : BUL642D2 PDF

• BUL642D2
• BUL642D2G
• BUL64A
• BUL64B